Graphitic carbon nitride (g-C3N4) is a promising candidate for photocatalysis, but exhibits moderate activity due to strongly bound excitons and sluggish charge migration. The dissociation of excitons to free electrons and holes is considered an effective strategy to enhance photocatalytic activity. Herein, a novel boron nitride quantum dots (BNQDs) modified P-doped g-C3N4 photocatalyst (BQPN) was successfully prepared by thermal polymerization method. Photoluminescence techniques and photoelectrochemical tests demonstrated that the introduction of P atoms and BNQDs promoted the dissociation of excitons and the migration of photogenerated carriers. Specifically, theoretical calculations revealed that P substitutions were the sites of pooled electrons, while BNQDs were the excellent photogenerated hole extractors. Accordingly, compared with g-C3N4, the BQPN showed improved performance in degrading four non-steroidal anti-inflammatory drugs (NSAIDs) under visible light irradiation. This work not only establishes an in-depth understanding of excitonic regulation in g-C3N4, but also offers a promising photocatalytic technology for environmental remediation.
Keywords: Boron nitride quantum dots; Carrier transfer; Exciton dissociation; Graphitic carbon nitride; Phosphorus doping.
Copyright © 2022 Elsevier B.V. All rights reserved.