Deep Etching of Silicon Based on Metal-Assisted Chemical Etching

Anafi Nur'aini; Ilwhan Oh

doi:10.1021/acsomega.2c01113

Deep Etching of Silicon Based on Metal-Assisted Chemical Etching

ACS Omega. 2022 May 2;7(19):16665-16669. doi: 10.1021/acsomega.2c01113. eCollection 2022 May 17.

Authors

Anafi Nur'aini¹, Ilwhan Oh¹

Affiliation

¹ Departments of Applied Chemistry, Chemical Engineering, and Department of Energy Convergence Engineering, Kumoh National Institute of Technology, Gumi, Gyeongbuk 39177, South Korea.

Abstract

A deep etching method for silicon "micro"structures was successfully developed. This wet etching process is based on metal-assisted chemical etching (MACE), which was previously mainly utilized to etch the features that have lateral dimensions of "nanometers." In this novel MACE, the critical improvement was to promote the "out-of-plane" mass transfer at the metal/Si interface with an ultrathin metal film. This enabled us to etch micrometer-wide holes, which was previously challenging due to the mass transport limitation. In addition, it was found that when ethanol was used as a solvent instead of water, the formation of porous defects was suppressed. Under the optimized etch conditions, deep (>200 μm) and vertical (>88°) holes could be carved out at a fast etch rate (>0.4 μm/min). This novel deep MACE will find utility in applications such as microelectromechanical systems (MEMS) devices or biosensors.