Noise logic with an InGaN/SiNx/Si uniband diode photodetector

Jiaxun Song; Richard Nötzel

doi:10.1038/s41598-022-12481-1

Noise logic with an InGaN/SiN_x/Si uniband diode photodetector

Sci Rep. 2022 May 19;12(1):8376. doi: 10.1038/s41598-022-12481-1.

Authors

Jiaxun Song¹, Richard Nötzel^{2

3}

Affiliations

¹ Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, People's Republic of China. jiaxunsong@m.scnu.edu.cn.
² Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, People's Republic of China. richard.noetzel@scnu.edu.cn.
³ National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou, 510006, People's Republic of China. richard.noetzel@scnu.edu.cn.

Abstract

Noise logic is introduced by the wavelength dependent photocurrent noise of an InGaN/SiN_x/Si uniband diode photodetector. A wavelength versus photocurrent noise discrimination map is constructed from the larger photocurrent noise for red light than that for green light. A minimum measurement time of four seconds is deduced from the standard deviation of the photocurrent noise for a safe wavelength distinction. A logic NOT gate is realized as representative with on or off red or green light as binary 1 or 0 inputs and the photocurrent noise above or below a defined threshold as binary 1 or 0 outputs.

Abstract

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