Four different graphene-based temperature sensors were prepared, and their temperature and humidity dependences were tested. Sensor active layers prepared from reduced graphene oxide (rGO) and graphene nanoplatelets (Gnp) were deposited on the substrate from a dispersion by air brush spray coating. Another sensor layer was made by graphene growth from a plasma discharge (Gpl). The last graphene layer was prepared by chemical vapor deposition (Gcvd) and then transferred onto the substrate. The structures of rGO, Gnp, and Gpl were studied by scanning electron microscopy. The obtained results confirmed the different structures of these materials. Energy-dispersive X-ray diffraction was used to determine the elemental composition of the materials. Gcvd was characterized by X-ray photoelectron spectroscopy. Elemental analysis showed different oxygen contents in the structures of the materials. Sensors with a small flake structure, i.e., rGO and Gnp, showed the highest change in resistance as a function of temperature. The temperature coefficient of resistance was 5.16-3·K-1 for Gnp and 4.86-3·K-1 for rGO. These values exceed that for a standard platinum thermistor. The Gpl and Gcvd sensors showed the least dependence on relative humidity, which is attributable to the number of oxygen groups in their structures.
Keywords: graphene; graphene production methods; humidity dependence; temperature sensor.