Bright Single-Photon Sources for the Telecommunication O-Band Based on an InAs Quantum Dot with (In)GaAs Asymmetric Barriers in a Photonic Nanoantenna

Maxim Rakhlin; Grigorii Klimko; Sergey Sorokin; Marina Kulagina; Yurii Zadiranov; Dmitrii Kazanov; Tatiana Shubina; Sergey Ivanov; Alexey Toropov

doi:10.3390/nano12091562

Bright Single-Photon Sources for the Telecommunication O-Band Based on an InAs Quantum Dot with (In)GaAs Asymmetric Barriers in a Photonic Nanoantenna

Nanomaterials (Basel). 2022 May 5;12(9):1562. doi: 10.3390/nano12091562.

Authors

Maxim Rakhlin¹, Grigorii Klimko¹, Sergey Sorokin¹, Marina Kulagina¹, Yurii Zadiranov¹, Dmitrii Kazanov¹, Tatiana Shubina¹, Sergey Ivanov¹, Alexey Toropov¹

Affiliation

¹ Ioffe Institute, 194021 St. Petersburg, Russia.

Abstract

We report on single-photon emitters for the telecommunication O-band (1260-1360 nm), which comprise an InAs/(In)GaAs quantum dot with asymmetric barriers, placed inside a semiconductor tapered nanocolumn acting as a photonic nanoantenna. The implemented design of the barriers provides a shift in the quantum dot radiation wavelength towards the O-band, while the nanoantenna collects the radiation and ensures its effective output. With non-resonant optical pumping, the average count rate of emitted single photons exceeds 10 MHz with the second-order correlation function g(2)(0) = 0.18 at 8 K.

Keywords: InAs; MBE; nanoantenna; quantum dots; single-photon emission.

Abstract

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