Improved electrical transport properties of an n-ZnO nanowire/p-diamond heterojunction

Dandan Sang; Qingru Wang; Qinglin Wang; Dong Zhang; Haiquan Hu; Wenjun Wang; Bingyuan Zhang; Quli Fan; Hongdong Li

doi:10.1039/c8ra03546f

Improved electrical transport properties of an n-ZnO nanowire/p-diamond heterojunction

RSC Adv. 2018 Aug 13;8(50):28804-28809. doi: 10.1039/c8ra03546f. eCollection 2018 Aug 7.

Authors

Dandan Sang¹, Qingru Wang¹, Qinglin Wang¹, Dong Zhang¹, Haiquan Hu¹, Wenjun Wang¹, Bingyuan Zhang¹, Quli Fan^{1

2}, Hongdong Li³

Affiliations

¹ School of Physics Science and Information Technology, Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng University Liaocheng 252059 China wangqinglin@lcu.edu.cn phywwang@163.com.
² Key Laboratory for Organic Electronics & Information Displays, Institute of Advanced Materials, Nanjing University of Posts & Telecommunications Nanjing 210046 China.
³ State Key Laboratory of Superhard Materials, Jilin University Changchun 130012 China.

Abstract

A heterojunction of n-ZnO nanowire (NW)/p-B-doped diamond (BDD) was fabricated. The rectifying behavior was observed with the turn on voltage of a low value (0.8 V). The forward current at 5 V is 12 times higher than that of a larger diameter n-ZnO nanorod (NR)/p-BDD heterojunction. The electrical transport behaviors for the comparison of n-ZnO NWs/p-BDD and n-ZnO NRs/p-BDD heterojunctions are investigated over various bias voltages. The carrier injection process mechanism for ZnO NWs/BDD is analyzed on the basis of the proposed equilibrium energy band diagrams. The ZnO NWs/BDD heterojunction displays improved I-V characteristics and relatively high performance for the electrical transport properties.