In situ synthesis of monolayer graphene on silicon for near-infrared photodetectors

Pengcheng Xiang; Gang Wang; Siwei Yang; Zhiduo Liu; Li Zheng; Jiurong Li; Anli Xu; Menghan Zhao; Wei Zhu; Qinglei Guo; Da Chen

doi:10.1039/c9ra06792b

In situ synthesis of monolayer graphene on silicon for near-infrared photodetectors

RSC Adv. 2019 Nov 18;9(64):37512-37517. doi: 10.1039/c9ra06792b. eCollection 2019 Nov 13.

Authors

Pengcheng Xiang¹, Gang Wang¹, Siwei Yang², Zhiduo Liu^{3

4}, Li Zheng², Jiurong Li¹, Anli Xu^{2

4}, Menghan Zhao¹, Wei Zhu¹, Qinglei Guo^{5

6}, Da Chen¹

Affiliations

¹ Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University Ningbo 315211 P. R. China gangwang@nbu.edu.cn chenda@nbu.edu.cn.
² State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology Shanghai 200500 P. R. China.
³ State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences Beijing 100083 P. R. China.
⁴ College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences Beijing 100049 P. R. China.
⁵ Center of Nanoelectronics and School of Microelectronics, Shandong University Jinan 250100 P. R. China qlguo@sdu.edu.cn.
⁶ Department of Materials Science, Fudan University Shanghai 200433 P. R. China.

Abstract

Direct integration of monolayer graphene on a silicon (Si) substrate is realized by a simple thermal annealing process, involving a top copper (Cu) layer as the catalyst and an inserted polymethylmethacrylate (PMMA) as the carbon source. After spin-coating the PMMA carbon source on the Si substrate, the Cu catalyst was deposited on PMMA/Si by electron beam evaporation. After that, graphene was directly synthesized on Si by decomposition and dehydrogenation of PMMA and the catalyzation effect of Cu under a simple thermal annealing process. Furthermore, under an optimized growth condition, monolayer graphene directly formed on the Si substrate was demonstrated. Utilizing the as-grown graphene/Si heterojunction, near-infrared photodetectors with high detectivity (∼1.1 × 10¹⁰ cm Hz^1/2 W^-1) and high responsivity (50 mA W^-1) at 1550 nm were directly fabricated without any post-transfer process. The proposed approach for directly growing graphene on silicon is highly scalable and compatible with present nano/micro-fabrication systems, thus promoting the application of graphene in microelectronic fields.