Self-powered SBD solar-blind photodetector fabricated on the single crystal of β-Ga2O3

Chao Yang; Hongwei Liang; Zhenzhong Zhang; Xiaochuan Xia; Pengcheng Tao; Yuanpeng Chen; HeQiu Zhang; Rensheng Shen; Yingmin Luo; Guotong Du

doi:10.1039/c8ra00523k

Self-powered SBD solar-blind photodetector fabricated on the single crystal of β-Ga₂O₃

RSC Adv. 2018 Feb 8;8(12):6341-6345. doi: 10.1039/c8ra00523k. eCollection 2018 Feb 6.

Authors

Chao Yang^{1

2}, Hongwei Liang², Zhenzhong Zhang³, Xiaochuan Xia², Pengcheng Tao¹, Yuanpeng Chen^{1

2}, HeQiu Zhang², Rensheng Shen², Yingmin Luo², Guotong Du²

Affiliations

¹ School of Physics, Dalian University of Technology Dalian 116024 China hwliang@dlut.edu.cn.
² School of Microelectronics, Dalian University of Technology Dalian 116024 China.
³ State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences Changchun 130033 China.

Abstract

A Schottky barrier diode (SBD) solar-blind photodetector was fabricated based on the single crystal β-Ga₂O₃. Cu and Ti/Au were deposited on the top and bottom surface of Ga₂O₃ as Schottky and ohmic contacts, respectively. The SBD exhibits a higher rectification ratio of up to 5 × 10⁷ at ±2 V. The photoresponse spectra show a maximum responsivity at 241 nm and a cutoff wavelength of 256 nm. The solar-blind/ultraviolet and solar-blind/visible rejection ratio can reach a high level of up to 200 and 1000, respectively. It is interesting that the device has a clear response to the solar-blind wavelength at zero bias, which confirms it can be used as a self-powered solar-blind photodetector.