CVD controlled growth of large-scale WS2 monolayers

Zhuhua Xu; Yanfei Lv; Jingzhou Li; Feng Huang; Pengbo Nie; Siwei Zhang; Shichao Zhao; Shixi Zhao; Guodan Wei

doi:10.1039/c9ra06219j

CVD controlled growth of large-scale WS₂ monolayers

RSC Adv. 2019 Sep 19;9(51):29628-29635. doi: 10.1039/c9ra06219j. eCollection 2019 Sep 18.

Authors

Zhuhua Xu¹, Yanfei Lv¹, Jingzhou Li^{2

3}, Feng Huang¹, Pengbo Nie^{2

3}, Siwei Zhang^{2

3}, Shichao Zhao¹, Shixi Zhao³, Guodan Wei^{2

3}

Affiliations

¹ College of Materials & Environmental Engineering, Hangzhou Dianzi University Hangzhou 310018 P. R. China zhaoshichao@hdu.edu.cn.
² Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University Shenzhen 518055 P. R. China weiguodan@sz.tsinghua.edu.cn.
³ Tsinghua Shenzhen International Graduate School, Tsinghua University Shenzhen 518000 P. R. China.

Abstract

Monolayer tungsten disulfide (WS₂) with a direct band gap of ca. 2.0 eV and stable properties has been a hotspot in two-dimensional (2D) nanoelectronics and optoelectronics. However, it remains challenging to successfully prepare monolayer WS₂. In this paper, we report the chemical vapor deposition (CVD) growth behavior of hexagonal WS₂ monolayers by using WS₂ powders and sodium triosulfate (Na₂S₂O₃) as precursors. We observed the Na₂S₂O₃ has a significant effect on the WS₂ triangular and leaf-like shapes. In addition, based on proposed S-termination and W-termination theory, the growth mechanisms for different shapes of WS₂ were discussed.