Herein, the universal luminescence characteristics of porous Si nanowire arrays were exploited using a wide range of doping types and concentrations; we found that the dual-band photoluminescence intensities were correlated with the formation rates of Si nanowires with porous features; however, these intensities exhibited no evident dependence on the doping conditions. Furthermore, we demonstrated a facile and reliable transfer method implementing the freestanding Si nanowire arrays while maintaining the robust photoluminescence behaviors under bending conditions. The fabrication protocol, involving lateral etching locally at the nanowire ends, enabled the controlled formation of uniform and large-area transferred nanowires with vertical regularity. Without the additional deposition of Ag nanoparticles, these transferred Si nanowire films inherently possessed SERS sensing capability with a relative enhancement factor over 1.8 times that of the Si nanowires with electroless-deposited Ag nanoparticles, which could practically emerge as a functional design for the integration of practical biochip devices.
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