Chemical exfoliation efficacy of semiconducting WS2 and its use in an additively manufactured heterostructure graphene-WS2-graphene photodiode

Jay A Desai; Nirmal Adhikari; Anupama B Kaul

doi:10.1039/c9ra03644j

Chemical exfoliation efficacy of semiconducting WS₂ and its use in an additively manufactured heterostructure graphene-WS₂-graphene photodiode

RSC Adv. 2019 Aug 16;9(44):25805-25816. doi: 10.1039/c9ra03644j. eCollection 2019 Aug 13.

Authors

Jay A Desai^{1

2

3}, Nirmal Adhikari⁴, Anupama B Kaul^{2

3}

Affiliations

¹ Department of Metallurgical, Materials and Biomedical Engineering, University of Texas at El Paso El Paso TX 79968 USA anupama.kaul@unt.edu.
² Department of Material Science and Engineering Denton TX 76203 USA.
³ PACCAR Technology Institute, Department of Electrical Engineering, University of North Texas Denton TX 76203 USA.
⁴ Department of Electrical Engineering, University of Texas at El Paso El Paso TX 79968 USA.

Abstract

In the present work, various chemical exfoliation routes for semiconducting two-dimensional (2D) layered material WS₂ are explored, which include magnetic stirring (MS), shear mixing (SM), and horn-tip (HT) sonication. Current-voltage measurements, Raman spectroscopy, and photoluminescence (PL) spectroscopy were used to characterize the drop-casted WS₂ nanosheets produced by these three techniques and our analysis revealed that HT sonication produced the most optimal dispersions. Heterostructure photodetector devices were then fabricated using inkjet printing of the HT sonicated dispersions of WS₂ and graphene. The photodetector device performance was measured using a stream of ON/OFF light pulses generated using a red laser with wavelength λ ∼ 660 nm, and an arbitrary waveform generator. From this analysis, the photoresponsivity and detectivity of the graphene-WS₂-graphene heterostructure devices were calculated to be ∼0.86 A W^-1 and ∼10¹³ Jones, respectively. Capacitance-voltage (C-V) and C-frequency (f) measurements were also conducted, where the V was swept from -6 V to +6 V, while the change in C was measured from f ∼ 20 kHz up to 3 MHz to gain insights into the nature of the graphene-WS₂ interface. From the C-V measurements, the C plateaued at ∼324.3 pF from ∼-4 V to +4 V for the lowest f of 20 kHz and it reduced to ∼200 pF from -6 V to ∼-4 V, and similarly from ∼4 V to 6 V, C was ∼190 pF. The decrease in C for V > +4 V and V < -4 V was attributed to the reduction of the interfacial barrier at the electrodes which is suggestive of a Schottky-based photodiode at the graphene-WS₂ interface. A sharp decrease in C from ∼315.75 pF at 25.76 kHz to ∼23.79 pF at 480 kHz (at 0 V bias) from the C-f measurements suggests a strong effect of interface trap density on C built-up at the graphene-WS₂ interface and the ensuing Schottky barrier height. Our work confirms the excellent potential of solution-cast, trilayer graphene-WS₂-graphene heterostructures as a promising photodetector platform using additively manufactured inkjet printing.