Versatile vapor phase deposition approach to cesium tin bromide materials CsSnBr3, CsSn2Br5 and Cs2SnBr6

Sara Bonomi; Maddalena Patrini; Giovanni Bongiovanni; Lorenzo Malavasi

doi:10.1039/d0ra04680a

Versatile vapor phase deposition approach to cesium tin bromide materials CsSnBr₃, CsSn₂Br₅ and Cs₂SnBr₆

RSC Adv. 2020 Aug 3;10(48):28478-28482. doi: 10.1039/d0ra04680a.

Authors

Sara Bonomi¹, Maddalena Patrini², Giovanni Bongiovanni³, Lorenzo Malavasi¹

Affiliations

¹ Department of Chemistry, University of Pavia, INSTM Viale Taramelli 16 Pavia 27100 Italy lorenzo.malavasi@unipv.it +39 382 987921.
² Department of Physics, University of Pavia, CNISM Via Bassi 6 Pavia 27100 Italy.
³ Department of Physics, University of Cagliari S.P. Monserrato-Sestu km 0.7 Cagliari 09042 Italy.

Abstract

We report on the successful application of RF-magnetron sputtering to deposit, by using a single type of target, three different materials in the form of thin films within the Cs-Sn-Br compositional range, namely, CsSnBr₃, CsSn₂Br₅ and Cs₂SnBr₆. It is shown that, by playing with the deposition parameters and post-deposition treatments, it is possible to stabilize these three perovskites or perovskite related compounds by exploiting the versatility of vapor phase deposition. Full characterization in terms of crystal structure, optical properties and morphology is reported. The power of vapor phase methods in growing all-inorganic materials of interest for photovoltaic and optoelectronic applications is demonstrated here, indicating the advantageous use of sputtering for these complex materials.