Indirect-to-direct band gap transition and optical properties of metal alloys of Cs2Te1- x Ti x I6: a theoretical study

Diwen Liu; Wenying Zha; Rusheng Yuan; Benyong Lou; Rongjian Sa

doi:10.1039/d0ra07586h

Indirect-to-direct band gap transition and optical properties of metal alloys of Cs₂Te_{1- x} Ti _x I₆: a theoretical study

RSC Adv. 2020 Oct 6;10(60):36734-36740. doi: 10.1039/d0ra07586h. eCollection 2020 Oct 1.

Authors

Diwen Liu^{1

2}, Wenying Zha³, Rusheng Yuan³, Benyong Lou⁴, Rongjian Sa¹

Affiliations

¹ Institute of Oceanography, Fujian Key Laboratory of Functional Marine Sensing Materials, Minjiang University Fuzhou Fujian 350108 China rjsa@mju.edu.cn.
² College of Materials and Chemical Engineering, Pingxiang University Pingxiang 337055 China.
³ State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University Fuzhou 350108 P. R. China.
⁴ Research and Testing Center of Pharmaceutical Formulations, Ocean College, Minjiang University Fuzhou Fujian 350108 P. R. China lby@mju.edu.cn.

Abstract

In recent years, double perovskites have attracted considerable attention as potential candidates for photovoltaic applications. However, most double perovskites are not suitable for single-junction solar cells due to their large band gaps (over 2.0 eV). In the present study, we have investigated the structural, mechanical, electronic and optical properties of the Cs₂Te_1-x Ti _x I₆ solid solutions using first-principles calculations based on density functional theory. These compounds exhibit good structural stability compared to CH₃NH₃PbI₃. The results suggest that Cs₂TeI₆ is an indirect band gap semiconductor, and it can become a direct band gap semiconductor with the value of 1.09 eV when the doping concentration of Ti⁴⁺ is 0.50. Moreover, an ideal direct band gap of 1.31 eV is obtained for Cs₂Te_0.75Ti_0.25I₆. The calculated results indicate that all the structures are ductile materials except for Cs₂Te_0.50Ti_0.50I₆. Our results also show that these materials possess large absorption coefficients in the visible light region. Our work can provide a route to explore stable, environmentally friendly and high-efficiency light absorbers for use in optoelectronic applications.