We developed a 1.0 nm thick aluminum oxide (Al2O3) interlayer as an electron blocking layer to reduce leakage current and suppress exciton quenching induced by charge imbalance in inverted quantum dot light emitting diodes (QLEDs). The Al2O3 interlayer was deposited by an atomic layer deposition (ALD) process that allows precise thickness control. The Al2O3 interlayer lowers the mobility of electrons and reduces Auger recombination which causes the degradation of device performance. A maximum current efficiency of 51.2 cd A-1 and an external quantum efficiency (EQE) of 12.2% were achieved in the inverted QLEDs with the Al2O3 interlayer. The Al2O3 interlayer increased device efficiency by 1.1 times, increased device lifetime by 6 times, and contributed to reducing efficiency roll-off from 38.6% to 19.6% at a current density up to 150 mA cm-2. The improvement of device performance by the Al2O3 interlayer is attributed to the reduction of electron injection and exciton quenching induced by zinc oxide (ZnO) nanoparticles (NPs). This work demonstrates that the Al2O3 interlayer is a promising solution for charge control in QLEDs and that the ALD process is a reliable approach for atomic scale thickness control for QLEDs.
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