Interface engineering for gain perovskite photodetectors with extremely high external quantum efficiency

Xinyu Zhao; Lixiang Huang; Yukun Wang; Xinglin Zhu; Lei Li; Guoxin Li; Wenhong Sun

doi:10.1039/d0ra06618d

Interface engineering for gain perovskite photodetectors with extremely high external quantum efficiency

RSC Adv. 2020 Sep 4;10(54):32976-32983. doi: 10.1039/d0ra06618d. eCollection 2020 Sep 1.

Authors

Xinyu Zhao¹, Lixiang Huang¹, Yukun Wang¹, Xinglin Zhu¹, Lei Li¹, Guoxin Li¹, Wenhong Sun^{1

2}

Affiliations

¹ Research Center for Optoelectronic Materials and Devices, School of Physical Science and Technology, Guangxi University Nanning 530004 China ykwang0929@163.com 20180001@gxu.edu.cn.
² Key Laboratory of New Processing Technology for Nonferrous Metals and Materials (Ministry of Education), Guangxi University Nanning 530004 China.

Abstract

Efficient CH₃NH₃PbI₃ photodetectors (PDs) with an extremely high gain of the maximum external quantum efficiency (EQE) of 140 000% within the ultraviolet region to the near infrared region (NIR) and an extremely high responsivity (R) under a low bias of -5 V were successfully fabricated. The fabricated devices manifested outstanding environmental stability with only 10% degradation of EQE after being exposed to air for 24 h. These obtained results indicate the promising potential of perovskite PDs for visible light communication applications.