The effects of Ba-doping on the structure and photocatalytic performance of GaOOH were investigated for the first time in this paper. XRD, SEM, TEM, XPS, UPS, FT-IR, UV-Vis DRS, PL, BET and EPR characterizations were carried out to analyze the properties of Ba-doped GaOOH. The results showed that GaOOH crystallized well with the orthorhombic crystal system with space group Pbnm. The lattice parameters of GaOOH were found to be a = 4.509526 Å, b = 9.771034 Å and c = 2.969284 Å. The transition in the structural morphology of GaOOH before and after Ba-doping was observed in SEM pictures in which the morphology of GaOOH varied from wood-like to rice husk-like. At the same time, the specific surface area of 4 wt% Ba-doped GaOOH (21.5854 m2 g-1) was 3.42 times that of pure GaOOH (6.3047 m2 g-1). Ba-doping caused a red shift of the band gap according to UV-Vis DRS results. The enhanced defect states caused by Ba-doping was confirmed by PL results, which decreased the recombination rate of photogenerated electrons and photogenerated holes. Compared with pure GaOOH, when GaOOH with different Ba content was used as photocatalyst, the removal rate of enrofloxacin was increased by more than 20% only by illumination for 60 min. In addition, Ba-doped GaOOH had excellent stability and could be reused, which could reduce costs and increase the potential of its practical application.
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