Design of effective self-powered SnS2/halide perovskite photo-detection system based on triboelectric nanogenerator by regarding circuit impedance

Leyla Shooshtari; Soheil Ghods; Raheleh Mohammadpour; Ali Esfandiar; Azam Iraji Zad

doi:10.1038/s41598-022-11327-0

Design of effective self-powered SnS₂/halide perovskite photo-detection system based on triboelectric nanogenerator by regarding circuit impedance

Sci Rep. 2022 May 4;12(1):7227. doi: 10.1038/s41598-022-11327-0.

Authors

Leyla Shooshtari¹, Soheil Ghods², Raheleh Mohammadpour³, Ali Esfandiar², Azam Iraji Zad^{1

2}

Affiliations

¹ Institute for Nanoscience and Nanotechnology, Sharif University of Technology, Tehran, 14588-89694, Iran.
² Physics Department, Sharif University of Technology, Tehran, 11365-9161, Iran.
³ Institute for Nanoscience and Nanotechnology, Sharif University of Technology, Tehran, 14588-89694, Iran. Mohammadpour@sharif.edu.

Abstract

Self-powered detectors based on triboelectric nanogenerators (TENG) have been considered because of their capability to convert ambient mechanical energy to electrical out-put signal, instead of conventional usage of electrochemical batteries as power sources. In this regard, the self-powered photodetectors have been designed through totally two lay out called passive and active circuit. in former model, impedance matching between the TENG and the resistance of the circuit's elements is crucial, which is not investigated systematically till now. In this paper, a cost effective novel planar photodetector (PD) based on heterojunction of SnS₂ sheets and Cs_0.05(FA_0.83 MA_0.17)_0.95Pb(I_0.83Br_0.17)₃ three cationic lead iodide based perovskite (PVK) layer fabricated which powered by graphene oxide (GO) paper and Kapton based contact-separated TENG (CS-TENG). To achieve the high performance of this device, the proper range of the load resistances in the circuit regards to TENG's characterization has been studied. In the next steps, the integrated self-powered photo-detection system was designed by applying Kapton/FTO and hand/FTO TENG, separately, in the proposed impedance matching circuit. The calculated D* of integrated self-powered SnS₂/PVK supplied by tapping the Kapton and hand on FTO is 2.83 × 10¹⁰ and 1.10 × 10¹³ Jones under the 10 mW/cm² of white light intensity, the investigations determine that for designing significate performance of self-powered PD supplied by TENG, the existence of the load resistance with the well match amount to the utilized TENG is crucial. Our results which can be generalized to other types of passive self-powered sensors, are substantial to both academia and industry concepts.