A Submicrosecond-Response Ultraviolet-Visible-Near-Infrared Broadband Photodetector Based on 2D Tellurosilicate InSiTe3

Jiawang Chen; Liang Li; Penglai Gong; Hanlin Zhang; Shiqi Yin; Ming Li; Liangfei Wu; Wenshuai Gao; Mingsheng Long; Lei Shan; Feng Yan; Guanghai Li

doi:10.1021/acsnano.1c11628

A Submicrosecond-Response Ultraviolet-Visible-Near-Infrared Broadband Photodetector Based on 2D Tellurosilicate InSiTe₃

ACS Nano. 2022 May 24;16(5):7745-7754. doi: 10.1021/acsnano.1c11628. Epub 2022 May 2.

Authors

Jiawang Chen^{1

2}, Liang Li^{1

2

3}, Penglai Gong⁴, Hanlin Zhang³, Shiqi Yin³, Ming Li^{1

2}, Liangfei Wu^{1

2}, Wenshuai Gao³, Mingsheng Long³, Lei Shan³, Feng Yan⁵, Guanghai Li^{1

2}

Affiliations

¹ Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P.R. China.
² University of Science and Technology of China, Hefei 230026, P.R. China.
³ Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P.R. China.
⁴ Key Laboratory of Optic-Electronic Information and Materials of Hebei Province, Institute of Life Science and Green Development, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China.
⁵ Department of Applied Physics, Research Institute of Intelligent Wearable Systems, The Hong Kong Polytechnic University, Kowloon, Hong Kong 999077, P.R. China.

PMID: 35499232
DOI: 10.1021/acsnano.1c11628

Abstract

2D material (2DM) based photodetectors with broadband photoresponse are of great value for a vast number of applications such as multiwavelength photodetection, imaging, and night vision. However, compared with traditional photodetectors based on bulk material, the relatively slow speed performance of 2DM based photodetectors hinders their practical applications. Herein, a submicrosecond-response photodetector based on ternary telluride InSiTe₃ with trigonal symmetry and layered structure was demonstrated in this study. The InSiTe₃ based photodetectors exhibit an ultrafast photoresponse (545-576 ns) and broadband detection capabilities from the ultraviolet (UV) to the near-infrared (NIR) optical communication region (365-1310 nm). Besides, the photodetector presents an outstanding reversible and stable photoresponse in which the response performance remains consistent within 200 000 cycles of switch operation. These significant findings suggest that InSiTe₃ can be a promising candidate for constructing fast response broadband 2DM based optoelectronic devices.

Keywords: InSiTe3; broadband photodetector; fast response; transistor; two-dimensional materials.