We introduce a new design space for optimizing III-V devices monolithically grown on Silicon substrates by extending the concept of nano-ridge engineering from binary semiconductors such as GaAs, InAs and GaSb to the ternary alloy InGaAs. This allows controlling the fundamental lattice constant of the fully relaxed ternary nano-ridge which thereby serves as a tunable base for the integration of diverse device hetero-layers. To demonstrate the flexibility of this approach, we realized an O-band nano-ridge laser containing three In0.45Ga0.55As quantum wells, which are pseudomorphically strained to an In0.25Ga0.75As nano-ridge base. The demonstration of an optically pumped nano-ridge laser operating around 1300 nm underlines the potential of this cost-efficient and highly scalable integration approach for silicon photonics.