Static High Voltage Actuation of Piezoelectric AlN and AlScN Based Scanning Micromirrors

Chris Stoeckel; Katja Meinel; Marcel Melzer; Agnė Žukauskaitė; Sven Zimmermann; Roman Forke; Karla Hiller; Harald Kuhn

doi:10.3390/mi13040625

Static High Voltage Actuation of Piezoelectric AlN and AlScN Based Scanning Micromirrors

Micromachines (Basel). 2022 Apr 15;13(4):625. doi: 10.3390/mi13040625.

Authors

Chris Stoeckel^{1

2}, Katja Meinel², Marcel Melzer², Agnė Žukauskaitė³, Sven Zimmermann^{1

2}, Roman Forke¹, Karla Hiller^{1

2}, Harald Kuhn^{1

2}

Affiliations

¹ Fraunhofer Institute for Electronic Nano Systems ENAS, 09126 Chemnitz, Germany.
² Center for Microtechnologies, Chemnitz University of Technology, 09111 Chemnitz, Germany.
³ Fraunhofer Institute for Organic Electronics, Electron Beam and Plasma Technology FEP, 01277 Dresden, Germany.

Abstract

Piezoelectric micromirrors with aluminum nitride (AlN) and aluminum scandium nitride (Al_0.68Sc_0.32N) are presented and compared regarding their static deflection. Two chip designs with 2 × 3 mm² (Design 1) and 4 × 6 mm² (Design 2) footprint with 600 nm AlN or 2000 nm Al_0.68Sc_0.32N as piezoelectric transducer material are investigated. The chip with Design 1 and Al_0.68Sc_0.32N has a resonance frequency of 1.8 kHz and a static scan angle of 38.4° at 400 V DC was measured. Design 2 has its resonance at 2.1 kHz. The maximum static scan angle is 55.6° at 220 V DC, which is the maximum deflection measurable with the experimental setup. The static deflection per electric field is increased by a factor of 10, due to the optimization of the design and the research and development of high-performance piezoelectric transducer materials with large piezoelectric coefficient and high electrical breakthrough voltage.

Keywords: AlN; AlScN; aluminum nitride; aluminum scandium nitride; micromirror; microscanner; piezoelectric.

Abstract

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