Shift of switching threshold in low-dimensional semiconductor-based complementary inverters via inkjet printing

Seoyeon Jung; Jihyun Lee; Juhee Park; Sangyeon Pak; Jungmoon Lim; SeungNam Cha; Bongjun Kim

doi:10.1088/1361-6528/ac67ab

Shift of switching threshold in low-dimensional semiconductor-based complementary inverters via inkjet printing

Nanotechnology. 2022 May 6;33(30). doi: 10.1088/1361-6528/ac67ab.

Authors

Seoyeon Jung¹, Jihyun Lee¹, Juhee Park¹, Sangyeon Pak², Jungmoon Lim³, SeungNam Cha³, Bongjun Kim^{1

4}

Affiliations

¹ Department of Electronics Engineering, Sookmyung Women's University, Seoul 04312, Republic of Korea.
² School of Electronic and Electrical Engineering, Hongik University, Seoul 04066, Republic of Korea.
³ Department of Physics, Sungkyunkwan University, Gyeonggi-do 16419, Republic of Korea.
⁴ Institute of Advanced Materials and Systems, Sookmyung Women's University, Seoul 04310, Republic of Korea.

PMID: 35428034
DOI: 10.1088/1361-6528/ac67ab

Abstract

MoS₂crystals grown by chemical vapor deposition are suited for realization of practical 2D semiconductor-based electronics. In order to construct complementary circuits with n-type MoS₂, another p-type semiconductor, whose performance can be adjusted corresponding to that of MoS₂in the limited chip area, has to be sought. Herein, we present a method for tuning switching threshold voltages of complementary inverters simply via inkjet printing without changing their channel dimensions. Random networks of inkjet printed single-walled carbon nanotubes are formed as p-channels beside MoS₂, and their density and thickness are controlled by varying the number of printed layers. As a result, p-type transistor characteristics as well as inverter characteristics are facilely tuned only by varying the number of printed layers.

Keywords: carbon nanotube (CNT); molybdenum disulfide (MoS2); printed electronics; tunable switching threshold.