A mechanism for the variation in the photoelectric performance of a photodetector based on CVD-grown 2D MoS2

Jiaying Jian; Honglong Chang; Pengfan Dong; Zewen Bai; Kangnian Zuo

doi:10.1039/d0ra10302k

A mechanism for the variation in the photoelectric performance of a photodetector based on CVD-grown 2D MoS₂

RSC Adv. 2021 Jan 28;11(9):5204-5217. doi: 10.1039/d0ra10302k. eCollection 2021 Jan 25.

Authors

Jiaying Jian^{1

2

3}, Honglong Chang¹, Pengfan Dong³, Zewen Bai³, Kangnian Zuo³

Affiliations

¹ School of Mechanical Engineering, Northwestern Polytechnical University Baoding 710072 P. R. China jianjiaying@nwpu.edu.cn changhl@nwpu.edu.cn.
² School of Electronic Information and Engineering, Xi'an Technological University Xi'an 710021 P. R. China jianjiaying@xatu.edu.cn.
³ Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices, Xi'an Technological University Xi'an 710021 P. R. China.

Abstract

Two-dimensional transition-metal dichalcogenides are considered as promising candidates for next-generation flexible nanoelectronics owing to their compelling properties. The photoelectric performance of a photodetector based on CVD-grown 2D MoS₂ was studied. It is found that annealing treatment can make the photoresponsivity and specific detectivity of the CVD-grown 2D MoS₂ based photodetector increase from 0.1722 A W^-1 and 10^14.65 Jones to 0.2907 A W^-1 and 10^14.84 Jones, respectively, while vulcanization can make the rise response time and fall response time decrease from 0.9013 s and 2.173 s to 0.07779 s and 0.08616 s, respectively. A method to determine the O-doping concentration in the CVD-grown 2D MoS₂ has been obtained. The criterion for the CVD-grown 2D MoS₂ to transition from an oxygen-doped state to a pure state has been developed. A mechanism explaining the variation in the photoelectric performance of the CVD-grown 2D MoS₂ has been proposed. The CVD-grown 2D MoS₂ and the annealed CVD-grown 2D MoS₂ are oxygen-doped MoS₂ while the vulcanized CVD-grown 2D MoS₂ is pure MoS₂. The variation in the photoelectric performance of CVD-grown 2D MoS₂ results from differences in the O-doping concentration and the bandgap.