Chemical vapor deposition and temperature-dependent Raman characterization of two-dimensional vanadium ditelluride

Mongur Hossain; Muhammad Ahsan Iqbal; Juanxia Wu; Liming Xie

doi:10.1039/d0ra07868a

Chemical vapor deposition and temperature-dependent Raman characterization of two-dimensional vanadium ditelluride

RSC Adv. 2021 Jan 12;11(5):2624-2629. doi: 10.1039/d0ra07868a. eCollection 2021 Jan 11.

Authors

Mongur Hossain^{1

2

3}, Muhammad Ahsan Iqbal^{2

3}, Juanxia Wu², Liming Xie^{2

3}

Affiliations

¹ Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082 P. R. China hossain@hnu.edu.cn.
² CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology Beijing 100190 P. R. China xielm@nanoctr.cn.
³ University of Chinese Academy of Sciences Beijing 100049 P. R. China.

Abstract

Recently, ultrathin two-dimensional (2D) metallic vanadium dichalcogenides have attracted widespread attention because of the charge density wave (CDW) phase transition and possible ferromagnetism. Herein, we report the synthesis and temperature-dependent Raman characterization of the 2D vanadium ditelluride (VTe₂). The synthesis is done by atmospheric pressure chemical vapor deposition (APCVD) using vanadium chloride (VCl₃) precursor on fluorphlogopite mica, sapphire, and h-BN substrates. A large area of the thin film with thickness ∼10 nm is grown on the hexagonal boron nitride (h-BN) substrate. Temperature-dependent Raman characterization of VTe₂ is conducted from room temperature to 513 K. Remarkable changes of Raman modes at around 413 K are observed, indicating the structural phase transition.