Effect of Threading Dislocations on the Electronic Structure of La-Doped BaSnO3 Thin Films

Jeonghun Kang; Jeong Hyuk Lee; Han-Koo Lee; Kwang-Tak Kim; Jin Hyeok Kim; Min-Jae Maeng; Jong-Am Hong; Yongsup Park; Kee Hoon Kim

doi:10.3390/ma15072417

Effect of Threading Dislocations on the Electronic Structure of La-Doped BaSnO₃ Thin Films

Materials (Basel). 2022 Mar 25;15(7):2417. doi: 10.3390/ma15072417.

Authors

Jeonghun Kang¹, Jeong Hyuk Lee¹, Han-Koo Lee², Kwang-Tak Kim¹, Jin Hyeok Kim³, Min-Jae Maeng⁴, Jong-Am Hong⁴, Yongsup Park^{4

5}, Kee Hoon Kim^{1

6}

Affiliations

¹ Center for Novel States of Complex Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea.
² Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 37673, Korea.
³ Optoelectronic Convergence Research Center, Department of Materials Science and Engineering, Chonnam National University, Gwangju 61185, Korea.
⁴ Department of Physics, Kyung Hee University, Seoul 02447, Korea.
⁵ Department of Information Display, Kyung Hee University, Seoul 02447, Korea.
⁶ Department of Physics and Astronomy, Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.

Abstract

In spite of great application potential as transparent n-type oxides with high electrical mobility at room temperature, threading dislocations (TDs) often found in the (Ba,La)SnO₃ (BLSO) films can limit their intrinsic properties so that their role in the physical properties of BLSO films need to be properly understood. The electrical properties and electronic structure of BLSO films grown on SrTiO₃ (001) (STO) and BaSnO₃ (001) (BSO) substrates are comparatively studied to investigate the effect of the TDs. In the BLSO/STO films with TD density of ~1.32 × 10¹¹ cm^-2, n-type carrier density n_e and electron mobility are significantly reduced, as compared with the BLSO/BSO films with nearly no TDs. This indicates that TDs play the role of scattering-centers as well as acceptor-centers to reduce n-type carriers. Moreover, in the BLSO/STO films, both binding energies of an Sn 3d core level and a valence band maximum are reduced, being qualitatively consistent with the Fermi level shift with the reduced n-type carriers. However, the reduced binding energies of the Sn 3d core level and the valence band maximum are clearly different as 0.39 and 0.19 eV, respectively, suggesting that the band gap renormalization preexisting in proportion to n_e is further suppressed to restore the band gap in the BLSO/STO films with the TDs.

Keywords: bandgap renormalization; barium stannate (BaSnO3); perovskite oxide; photoemission spectroscopy; threading dislocation.

Abstract

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