Broadband photoresponse arising from photo-bolometric effect in quasi-one-dimensional Ta2Ni3Se8

W L Zhen; W T Miao; W L Zhu; C J Zhang; W K Zhu

doi:10.1088/1361-648X/ac638b

Broadband photoresponse arising from photo-bolometric effect in quasi-one-dimensional Ta₂Ni₃Se₈

J Phys Condens Matter. 2022 Apr 25;34(25). doi: 10.1088/1361-648X/ac638b.

Authors

W L Zhen^{1

2}, W T Miao¹, W L Zhu¹, C J Zhang^{1

3}, W K Zhu¹

Affiliations

¹ High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China.
² University of Science and Technology of China, Hefei 230026, People's Republic of China.
³ Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China.

PMID: 35366657
DOI: 10.1088/1361-648X/ac638b

Abstract

In this paper, we report the synthesis of high-quality Ta₂Ni₃Se₈crystals free of noble or toxic elements and the fabrication and testing of photodetectors on the wire samples. A broadband photoresponse from 405 nm to 1550 nm is observed, along with performance parameters including relatively high photoresponsivity (10 mA W^-1) and specific detectivity (3.5 × 10⁷Jones) and comparably short response time (τ_rise= 433 ms,τ_decay= 372 ms) for 1064 nm, 0.5 V bias and 1.352 mW mm^-2. Through extensive measurement and analysis, it is determined that the dominant mechanism for photocurrent generation is the photo-bolometric effect, which is believed to be responsible for the very broad spectral detection capability. More importantly, the pronounced response to 1310 nm and 1550 nm wavelengths manifests its promising applications in optical communications. Considering the quasi-one-dimensional structure with layered texture, the potential to build nanodevices on Ta₂Ni₃Se₈makes it even more important in future electronic and optoelectronic applications.

Keywords: infrared detectors; narrow bandgap semiconductors; optical communications; optoelectronic devices.