Titanium nitride (TiN), a transition-metal compound with tight covalent Ti-N bonding, has a high melting temperature and superior mechanical and chemical stabilities compared to noble metals. With a reduction in thickness, the optical transmittance of TiN films can be drastically increased, and in combination with its excellent electrical conductivity, the ultrathin and continuous TiN film can be considered as an ideal alternative of the metal oxide electrodes. However, the deposition of ultrathin and continuous metallic layer with a smooth surface morphology is a major challenge for typical deposition methods such as thermal evaporation or reactive sputtering. In particular, defects mainly related with oxygen contents and surface scattering can significantly limit the performance of ultrathin TiN films. In this work, ultrathin TiN films with 2-10 nm in thickness are grown by using the nitrogen plasma-assisted molecular-beam epitaxy (MBE) method in an ultrahigh vacuum environment. Excellent surface morphology with a root-mean-square roughness of ≤0.12 nm and a high optical transparency of 75% over the whole visible regime are achieved for ultrathin TiN epitaxial films. The dielectric properties determined by the spectroscopic ellipsometry and the electrical properties measured by the terahertz spectroscopy and the Hall effect method reveal that the percolation thickness of the TiN epitaxial film is less than 2.4 nm and its electrical conductivity is higher than 1.1 × 104 Ω-1 cm-1. These features make MBE-grown ultrathin TiN epitaxial films a good candidate for robust, low cost, and large-area transparent conductive electrodes.
Keywords: THz spectroscopy; molecular-beam epitaxy; refractory material; spectroscopic ellipsometry; titanium nitride; transparent conductive electrode.