High-Performance Planar-Type Photodetector Based on Hot-Pressed CsPbBr3 Wafer

Xiao Zhao; Shimao Wang; Fuwei Zhuge; Yanan Song; Toru Aoki; Weiwei Dong; Mengyu Fu; Gang Meng; Zanhong Deng; Ruhua Tao; Xiaodong Fang

doi:10.1021/acs.jpclett.2c00089

High-Performance Planar-Type Photodetector Based on Hot-Pressed CsPbBr₃ Wafer

J Phys Chem Lett. 2022 Apr 7;13(13):3008-3015. doi: 10.1021/acs.jpclett.2c00089. Epub 2022 Mar 29.

Authors

Xiao Zhao^{1

2}, Shimao Wang^{2

3}, Fuwei Zhuge⁴, Yanan Song^{2

5}, Toru Aoki⁶, Weiwei Dong⁷, Mengyu Fu^{2

5}, Gang Meng^{2

3}, Zanhong Deng^{2

3}, Ruhua Tao^{2

3}, Xiaodong Fang^{2

8}

Affiliations

¹ School of Environmental Science and Optoelectronic Technology, University of Science and Technology of China, Hefei 230026, People's Republic of China.
² Anhui Provincial Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, and Key Laboratory of Photovoltaic and Energy Conservation Materials, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, People's Republic of China.
³ Advanced Laser Technology Laboratory of Anhui Province, Hefei 230037, People's Republic of China.
⁴ School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
⁵ Science Island Branch of Graduate School, University of Science and Technology of China, Hefei 230026, People's Republic of China.
⁶ Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan.
⁷ School of Materials and Chemical Engineering, Anhui Jianzhu University, Hefei 230009, People's Republic of China.
⁸ College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, People's Republic of China.

PMID: 35348323
DOI: 10.1021/acs.jpclett.2c00089

Abstract

Considering the disadvantages of the common methods for CsPbBr₃ single crystal growth including the high cost of the melt method and the low shape controllability of the solution method, a facile hot-pressed (HP) approach has been introduced to prepare CsPbBr₃ wafers. The effects of HP temperature on the phase purity of HP-CsPbBr₃ wafers and the performance of the corresponding photodetectors have been investigated. The HP temperature for preparing phase-pure, shape-regular, and dense CsPbBr₃ wafers has been optimized to be 150 °C, and the HP-CsPbBr₃ wafer based planar-type photodetectors exhibit an ultrasensitive weak light photoresponse. Under the illumination of a 530 nm LED with a light power density of 1.1 μW cm^-2, the responsivity, external quantum efficiency, and detectivity of the devices reach 19.79 A W^-1, 4634%, and 2.14 × 10¹³ Jones, respectively, and a fast response speed with a rise time of 40.5 μs and a fall time of 10.0 μs has been achieved.