Dopant-free hole-transporting materials for stable Sb2(S,Se)3 solar cells

Yinan Xiang; Huanxin Guo; Zhiyuan Cai; Chenhui Jiang; Changfei Zhu; Yongzhen Wu; Wei-Hong Zhu; Tao Chen

doi:10.1039/d1cc07041j

Dopant-free hole-transporting materials for stable Sb₂(S,Se)₃ solar cells

Chem Commun (Camb). 2022 Apr 12;58(30):4787-4790. doi: 10.1039/d1cc07041j.

Authors

Yinan Xiang¹, Huanxin Guo², Zhiyuan Cai¹, Chenhui Jiang¹, Changfei Zhu¹, Yongzhen Wu², Wei-Hong Zhu², Tao Chen¹

Affiliations

¹ Hefei National Laboratory for Physical Sciences at Microscale, Department of Materials Science and Engineering, University of Science and Technology of China, No. 96 Jinzhai Road, Hefei, Anhui Province, 230026, P. R. China. tchenmse@ustc.edu.cn.
² Institute of Fine Chemicals, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Meilong Road 130, Shanghai 200237, P. R. China. wu.yongzhen@ecust.edu.cn.

PMID: 35343982
DOI: 10.1039/d1cc07041j

Abstract

Herein, we demonstrate that a thiophene-modified quinoxaline core small molecule can be applied in Sb₂(S,Se)₃ solar cells. We reveal that the interaction between thiophene and Sb₂(S,Se)₃ through the Sb-S bond essentially improves the interfacial hole-extraction ability. This study provides a cost-effective dopant-free hole-transporting material for inorganic thin film solar cell applications with excellent stability.