Xenon-filled diode performance under influence of low doses of gamma radiation

Milić M Pejović; Emilija N Živanović; Milan D Stojanović

doi:10.1016/j.apradiso.2022.110207

Xenon-filled diode performance under influence of low doses of gamma radiation

Appl Radiat Isot. 2022 Jun:184:110207. doi: 10.1016/j.apradiso.2022.110207. Epub 2022 Mar 18.

Authors

Milić M Pejović¹, Emilija N Živanović², Milan D Stojanović²

Affiliations

¹ University of Niš, Faculty of Electronic Engineering, Aleksandra Medvedeva 14, 18000, Niš, Serbia. Electronic address: milic.pejovic@elfak.ni.ac.rs.
² University of Niš, Faculty of Electronic Engineering, Aleksandra Medvedeva 14, 18000, Niš, Serbia.

PMID: 35316779
DOI: 10.1016/j.apradiso.2022.110207

Abstract

This paper presents a detailed statistical analysis of experimental results of dynamic breakdown voltage and electrical breakdown time delay for xenon-filled diode. These quantities have a stochastic nature and they were measured in the cases when the xenon-filled diode was and was not exposed to a gamma radiation source, with exposure dose rate 7.7⋅10^-12 C/(kg⋅s). The static breakdown voltage was estimated based on dynamic breakdown voltage as a function of voltage increase rate. The applicability of certain distributions to experimental dynamic breakdown voltage and electrical breakdown time delay data was also analyzed.

Keywords: Breakdown voltage; Gamma radiation; Time delay.

MeSH terms

Gamma Rays
Xenon*

Substances

Xenon