Precise control over the polarity of transistors is a key necessity for the construction of complementary metal-oxide-semiconductor circuits. However, the polarity control of 2D transistors remains a challenge because of the lack of a high-work-function electrode that completely eliminates Fermi-level pinning at metal-semiconductor interfaces. Here, a creation of clean van der Waals contacts is demonstrated, wherein a metallic 2D material, chlorine-doped SnSe2 (Cl-SnSe2 ), is used as the high-work-function contact, providing an interface that is free of defects and Fermi-level pinning. Such clean contacts made from Cl-SnSe2 can pose nearly ideal Schottky barrier heights, following the Schottky-Mott limit and thus permitting polarity-controllable transistors. With the integration of Cl-SnSe2 as contacts, WSe2 transistors exhibit pronounced p-type characteristics, which are distinctly different from those of the devices with evaporated metal contacts, where n-type transport is observed. Finally, this ability to control the polarity enables the fabrication of functional logic gates and circuits, including inverter, NAND, and NOR.
Keywords: 2D materials; Fermi-level pinning; Schottky-Mott limit; complementary metal-oxide-semiconductors; van der Waals contacts.
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