Reconfigurable silicon photonic devices attract much research attention, and hybrid integration with tunable phase-change materials (PCMs) exhibiting large refractive index contrast between amorphous (Am) and crystalline (Cr) states is a promising way to achieve this goal. Here, we propose and numerically investigate a Sb2Se3-Si hybrid waveguide Bragg filter operating in the telecom C-band on the silicon-on-insulator (SOI) platform. The proposed device consists of a Bragg grating (BG) with a thin top layer of ultralow-loss Sb2Se3 PCM interacting with evanescent field of the silicon waveguide mode. By harnessing the ultralow-loss and reversible index change of Sb2Se3 film, the spectral response of the hybrid BGs could be dynamically tuned. We also theoretically investigate the reversible phase transitions between Am and Cr states of Sb2Se3 film that could be attained by applying voltage pulses on the indium-tin-oxide (ITO) strip heater covered on Sb2Se3 film. Thermal simulations show that a 2 V (4.5 V) pulse with a duration of 400 ns (55 ns) applied to electric contacts would produce crystallization (or amorphization). The proposed structure may find great potential for on-chip phase tunable devices on a silicon platform.