1T and 2H heterophase MoS2for enhanced sensitivity of GaN transistor-based mercury ions sensor

Nipun Sharma; Adarsh Nigam; Surani Bin Dolmanan; Ankur Gupta; Sudhiranjan Tripathy; Mahesh Kumar

doi:10.1088/1361-6528/ac5cff

1T and 2H heterophase MoS₂for enhanced sensitivity of GaN transistor-based mercury ions sensor

Nanotechnology. 2022 Apr 7;33(26). doi: 10.1088/1361-6528/ac5cff.

Authors

Nipun Sharma^{1

2}, Adarsh Nigam¹, Surani Bin Dolmanan³, Ankur Gupta², Sudhiranjan Tripathy³, Mahesh Kumar¹

Affiliations

¹ Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Jodhpur-342037, India.
² Department of Mechanical Engineering, Indian Institute of Technology Jodhpur, Jodhpur-342037, India.
³ IMRE, Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Innovis, 2 Fusionopolisway, 117602, Singapore.

PMID: 35276685
DOI: 10.1088/1361-6528/ac5cff

Abstract

We report significantly enhanced sensitivity of AlGaN/GaN-based high electron mobility transistor (HEMT) sensor by the targeted synthesis of IT and 2H coexisting phase MoS₂and applying the gate bias voltage. The HEMT structures on Si (111) substrates were used for the detection of Hg²⁺ions. The optimum sensitive regime in terms ofV_GSandV_DSof the sensor was investigated by keeping the drain source voltageV_DSconstant at 2 V and by only varying the gate bias voltageV_GSfrom 0 to 3 V. The strongest sensing response obtained from the device was around 0.547 mA ppb^-1atV_GS = 3 V, which is 63.7% higher in comparison to the response achieved at 0 V which shows a sensing response of around 0.334 mA ppb^-1. The current response depicts that the fabricated device is very sensitive and selective towards Hg²⁺ions. Moreover, the detection limit of our sensor at 3 V was calculated around 6.21 ppt, which attributes to the strong field created between the gate electrode and the HEMT channel due to the presence of 1T metallic phase in synthesized MoS₂, indicating that the lower detection limits are achievable in adequate strong fields.

Keywords: GaN; functional materials; heavy metal ions; high electron mobility transistors.