Diamond has many appealing properties, including biocompatibility, ease of surface modification, and chemical-physical stability. In this study, the temperature dependence of the pH-sensitivity of a oxygen-terminated boron-doped diamond solution gate FET (C-O BDD SGFET) is reported. The C-O BDD SGFET operated in an electrolyte solution at 95 °C. At 80 °C, the pH sensitivity of C-O BDD SGFET dropped to 4.27 mV/pH. As a result, we succeeded in developing a highly sensitive pH sensing system at -54.6 mV/pH at 80 °C by combining it with a highly pH sensitive stainless-steel vessel.
Keywords: boron-doped diamond; diamond solution gate field effect transistor; high temperature; pH insensitive; stainless-steel vessel.