Tunable morphology and highly stable α-CsPbI3 Nano-bricks for photoelectric devices

Xiaoyu Zhou; Xiaoxuan Li; Lichun Zhang; Fusong Yan; Cheng Wang; Shunli He; Xinbo Chu; Fengzhou Zhao

doi:10.1016/j.jcis.2022.02.118

Tunable morphology and highly stable α-CsPbI₃ Nano-bricks for photoelectric devices

J Colloid Interface Sci. 2022 Jun 15:616:730-738. doi: 10.1016/j.jcis.2022.02.118. Epub 2022 Feb 26.

Authors

Xiaoyu Zhou¹, Xiaoxuan Li¹, Lichun Zhang², Fusong Yan¹, Cheng Wang¹, Shunli He¹, Xinbo Chu¹, Fengzhou Zhao³

Affiliations

¹ School of Physics and Optoelectronic Engineering, Ludong University, Yantai, 264025, China.
² School of Physics and Optoelectronic Engineering, Ludong University, Yantai, 264025, China. Electronic address: zhanglichun@ldu.edu.cn.
³ School of Physics and Optoelectronic Engineering, Ludong University, Yantai, 264025, China. Electronic address: fzzhao@ldu.edu.cn.

PMID: 35247811
DOI: 10.1016/j.jcis.2022.02.118

Abstract

CsPbI₃ with suitable bandgap (∼1.73 eV) and excellent photoelectric performance are considered promising candidates for new-generation photovoltaic and photoelectric devices. However, the phase instability of CsPbI₃ hinders its application in photoelectric devices. In this study, cubic phase CsPbI₃ nano-bricks with high stability are prepared on Si substrates by catalyst-freehigh-pressure pulsedlaser deposition.Theeffectsofthetarget-substrate distance on the morphological, structural and photoluminescence propertiesofCsPbI₃ nano-bricks are investigated. CsPbI₃ nano-bricks exhibits excellent long-term stability for 12 months, which can be attributed to the smaller lattice mismatch between Si (100) and CsPbI₃ (100). Furthermore, the photodetector based on CsPbI₃/n-Si heterojunction exhibited obvious spectral response in the red band of 710 nm. This work provides a novel idea for the preparation of photoelectric devices with cubic CsPbI₃.

Keywords: Catalyst-freehigh-pressure pulsedlaser deposition; CsPbI(3) nano-bricks; Long-term stability; Photodetector.