Growth of highly conducting MoS2-xNx thin films with enhanced 1T' phase by pulsed laser deposition and exploration of their nanogenerator application

Swati Parmar; Neetu Prajesh; Minal Wable; Ram Janay Choudhary; Suresh Gosavi; Ramamoorthy Boomishankar; Satishchandra Ogale

doi:10.1016/j.isci.2022.103898

Growth of highly conducting MoS_2-xN_x thin films with enhanced 1T' phase by pulsed laser deposition and exploration of their nanogenerator application

iScience. 2022 Feb 10;25(3):103898. doi: 10.1016/j.isci.2022.103898. eCollection 2022 Mar 18.

Authors

Swati Parmar¹, Neetu Prajesh², Minal Wable¹, Ram Janay Choudhary³, Suresh Gosavi⁴, Ramamoorthy Boomishankar², Satishchandra Ogale^{1

5}

Affiliations

¹ Department of Physics and Centre for Energy Science, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra 411008, India.
² Department of Chemistry and Centre for Energy Science, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra 411008, India.
³ UGC-DAE Consortium for Scientific Research, Indore 452001, India.
⁴ Department of Physics, Savitribai Phule Pune University, Pune, Maharashtra 411007, India.
⁵ Research Institute for Sustainable Energy (RISE), TCG Centre for Research and Education in Science and Technology (TCG-CREST), Kolkata 700091, India.

Abstract

High-quality growth of MoS_2-xN_x films is realized on single-crystal c-Al₂O₃ substrates by the pulsed laser deposition (PLD) in ammonia rendering highly stable and tunable 1T'/2H biphasic constitution. Raman spectroscopy reveals systematic enhancement of 1T' phase component due to the incorporation of covalently bonded N-doping in MoS₂ lattice, inducing compressive strain. Interestingly, the film deposited at 300 mTorr NH₃ shows ∼80% 1T' phase. The transport measurements performed on MoS_2-xN_x films deposited at 300 mTorr NH₃ display very low room temperature resistivity of 0.03 mΩ-cm which is 100 times enhanced over the undoped MoS₂ grown under comparable conditions. A triboelectric nanogenerator (TENG) device containing biphasic MoS_2-xN_x film as an electron acceptor exhibits a clear enhancement in the output voltage as compared to the pristine MoS₂. Device architecture, p-type N doping in MoS₂ lattice, favorably increased work-function, multiphasic component of MoS₂, and increased surface roughness synergistically contribute to superior TENG performance.

Keywords: Materials science; Materials synthesis; Nanomaterials.