Infinite possibilities of ultrathin III-V semiconductors: Starting from synthesis

Fangyun Lu; Huiliu Wang; Mengqi Zeng; Lei Fu

doi:10.1016/j.isci.2022.103835

Infinite possibilities of ultrathin III-V semiconductors: Starting from synthesis

iScience. 2022 Feb 1;25(3):103835. doi: 10.1016/j.isci.2022.103835. eCollection 2022 Mar 18.

Authors

Fangyun Lu¹, Huiliu Wang¹, Mengqi Zeng¹, Lei Fu¹

Affiliation

¹ College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China.

Abstract

Ultrathin III-V semiconductors have been receiving tremendous research interest over the past few years. Owing to their exotic structures, excellent physical and chemical properties, ultrathin III-V semiconductors are widely applied in the field of electronics, optoelectronics, and solar energy. However, the strong chemical bonds in layers are the bottleneck of the two-dimensionalization preparation process, which hinders the further development of ultrathin III-V semiconductors. Some effective methods to synthesize ultrathin III-V semiconductors have been reported recently. In this perspective, we briefly introduce the structures and properties of ultrathin III-V semiconductors firstly. Then, we comprehensively summarize the synthetic strategies of ultrathin III-V semiconductors, mainly focusing on space confinement, atomic substitution, adhesion energy regulation, and epitaxial growth. Finally, we summarize the current challenges and propose the development directions of ultrathin III-V semiconductors in the future.

Keywords: Materials synthesis; Nanomaterials; Semiconductor manufacturing.

Publication types

Review