Thermal atomic layer deposition of In2O3 thin films using a homoleptic indium triazenide precursor and water

Pamburayi Mpofu; Polla Rouf; Nathan J O'Brien; Urban Forsberg; Henrik Pedersen

doi:10.1039/d1dt03748j

Thermal atomic layer deposition of In₂O₃ thin films using a homoleptic indium triazenide precursor and water

Dalton Trans. 2022 Mar 22;51(12):4712-4719. doi: 10.1039/d1dt03748j.

Authors

Pamburayi Mpofu¹, Polla Rouf¹, Nathan J O'Brien¹, Urban Forsberg¹, Henrik Pedersen¹

Affiliation

¹ Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden. henrik.pedersen@liu.se.

PMID: 35234773
DOI: 10.1039/d1dt03748j

Abstract

Indium oxide (In₂O₃) is an important transparent conducting material widely used in optoelectronic applications. Herein, we study the deposition of In₂O₃ by thermal atomic layer deposition (ALD) using our recently reported indium(III) triazenide precursor and H₂O. A temperature interval with self-limiting growth was found between ∼270 and 385 °C with a growth per cycle of ∼1.0 Å. The deposited films were polycrystalline cubic In₂O₃ with In : O ratios of 1 : 1.2, and low levels of C and no detectable N impurities. The transmittance of the films was found to be >70% in visible light and the resistivity was found to be 0.2 mΩ cm. The high growth rates, low impurities, high optical transmittance, and low resistivity of these films give promise to this process being used for ALD of In₂O₃ films for future microelectronic displays.