A novel Multi-Quantum-Well Deep Ultra Violet Light Emitting Diode (DUV-LED) device with a near-pole hole insertion layer and far-pole hole insertion layer was proposed and carefully studied. It was found that remarkable enhancements both in the light output power (LOP) and the internal quantum efficiency (IQE) could be realized by using the far-electrode hole insertion layer and near-electrode hole insertion layer compared to the conventional DUV-LED device. Inserting the near-polar hole insertion layer can increase the electric field in the hole injection layer, which will promote the ionization of the acceptor, increase the hole concentration, and enhance the light-emitting performance of the device. In addition, inserting the far-pole hole insertion layer can suppress electron leakage and promote the hole injection. At the same time, the updated electron barrier height of P-AlGaN/GaN will indirectly weaken the electrostatic field in the hole injection layer, which remains inconducive to the ionization of the acceptor, implying that the electrostatic field between the P-AGaN/GaN layer can optimize the efficiency droop of the device.
Keywords: APSYS; AlGaN; DUV-LED; efficiency droop; hole insertion layer.