InGaAs/InP single-photon avalanche diodes (SPADs) are nowadays employed in many photon-counting applications in the near-infrared range. Photon detection efficiency (PDE) is one of the most important parameters of these detectors and here we present a model to precisely estimate it at different temperatures. Starting from optical and electrical TCAD simulations, we selected the most suitable models for the complex refractive indexes, ionization coefficients and minority carrier lifetime from the literature, and adjusted them so to include temperature and doping dependences. The good agreement between measured and simulated curves shows that our model is a valid tool to estimate PDE before device fabrication.