Ultrafast laser micromachining of crystalline silicon carbide (SiC) has great perspectives in aerospace industry and integrated circuit technique. In this report, we present a study of femtosecond laser nanostructuring on the surface of an n-type 4H-SiC single crystal. Except for uniform nanogratings, new types of large-area periodic structures including nanoparticle array and nanoparticle-nanograting hybrid structures were induced on the surface of 4H-SiC by scanning irradiation. The effects of pulse energy, scan speed, and the polarization direction on the morphology and periodicity of nanogratings were systematically explored. The proper parameter window for nanograting formation in pulse energy-scan speed landscape is depicted. Both the uniformity and the periodicity of the induced nanogratings are polarization dependent. A planar light attenuator for linear polarized light was demonstrated by aligning the nanogratings. The transition between different large-area periodic structures is achieved by simultaneous control of pulse energy and scan interval using a cross scan strategy. These results are expected to open up an avenue to create and manipulate periodic nanostructures on SiC crystals for photonic applications.