Resonant Raman Scattering in Boron-Implanted GaN

Yi Peng; Wenwang Wei; Muhammad Farooq Saleem; Kai Xiao; Yanlian Yang; Yufei Yang; Yukun Wang; Wenhong Sun

doi:10.3390/mi13020240

Resonant Raman Scattering in Boron-Implanted GaN

Micromachines (Basel). 2022 Jan 31;13(2):240. doi: 10.3390/mi13020240.

Authors

Yi Peng¹, Wenwang Wei¹, Muhammad Farooq Saleem¹, Kai Xiao¹, Yanlian Yang¹, Yufei Yang¹, Yukun Wang¹, Wenhong Sun^{1

2}

Affiliations

¹ Research Center for Optoelectronic Materials and Devices, School of Physical Science & Technology, Guangxi University, Nanning 530004, China.
² Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning 530004, China.

Abstract

A small Boron ion (B-ion) dose of 5 × 10¹⁴ cm^-2 was implanted in a GaN epilayer at an energy of 50 keV, and the sample was subjected to high-temperature rapid thermal annealing (RTA). The resonant Raman spectrum (RRS) showed a strong characteristic of a photoluminescence (PL) emission peak associated with GaN before B-ion implantation and RTA treatment. The PL signal decreased significantly after the B-ion implantation and RTA treatment. The analysis of temperature-dependent Raman spectroscopy data indicated the activation of two transitions in B-ion-implanted GaN in different temperature ranges with activation energies of 66 and 116 meV. The transition energies were estimated in the range of 3.357-3.449 eV through calculations. This paper introduces a calculation method that can be used to calculate the activation and transition energies, and it further highlights the strong influence of B-ion implantation on the luminesce of GaN.

Keywords: B-implantation; GaN; Raman spectroscopy; photoluminescence.

Abstract

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