Quasi-1D silicon nanowires (SiNWs) field effect transistors (FETs) integrated upon large-area elastomers are advantageous candidates for developing various high-performance stretchable electronics and displays. In this work, it is demonstrated that an orderly array of slim SiNW channels, with a diameter of <80 nm, can be precisely grown into desired locations via an in-plane solid-liquid-solid (IPSLS) mechanism, and reliably batch-transferred onto large area polydimethylsiloxane (PDMS) elastomers. Within an optimized discrete FETs-on-islands architecture, the SiNW-FETs can sustain large stretching strains up to 50% and repetitive testing for more than 1000 cycles (under 20% strain), while achieving a high hole carrier mobility, Ion /Ioff current ratio and subthreshold swing (SS) of ≈70 cm2 V-1 s-1 , >105 and 134 - 277 mV decade-1 , respectively, working stably in an ambient environment over 270 days without any passivation protection. These results indicate a promising new routine to batch-manufacture and integrate high-performance, scalable and stretchable SiNW-FET electronics that can work stably in harsh and large-strain environments, which is a key capability for future practical flexible display and wearable electronic applications.
Keywords: elastomers; field effect transistor; silicon nanowire integration; stretchable electronics.
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