High responsivity of hybrid MoTe2/perovskite heterojunction photodetectors

An Xie; Yuxian Jian; Zichao Cheng; Yu Gu; Zhanyang Chen; Xiufeng Song; Zaixing Yang

doi:10.1088/1361-648X/ac4f1b

High responsivity of hybrid MoTe₂/perovskite heterojunction photodetectors

J Phys Condens Matter. 2022 Feb 10;34(15). doi: 10.1088/1361-648X/ac4f1b.

Authors

An Xie¹, Yuxian Jian², Zichao Cheng², Yu Gu², Zhanyang Chen³, Xiufeng Song², Zaixing Yang⁴

Affiliations

¹ Key Laboratory of Functional Materials and Applications of Fujian Province, Xiamen University of Technology, Xiamen 361024, People's Republic of China.
² MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China.
³ Shangdong Gemei Tungsten & Molybdenum Material Co. Ltd, Weihai 265222, People's Republic of China.
⁴ School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, People's Republic of China.

PMID: 35081518
DOI: 10.1088/1361-648X/ac4f1b

Abstract

Two-dimensional (2D) van der Waals heterojunction offers alternative facile platforms for many optoelectronic devices due to no-dangling bonds and steep interface carrier gradient. Here, we demonstrate a 2D heterojunction device, which combines the benefits of high carrier mobility of 2D MoTe₂and strong light absorption of perovskite, to achieve excellent responsivity. This device architecture is constructed based on the charge carriers separation and transfer with the high-gain photogating effect at the interface of the heterojunction. The device exhibits high responsivity of 334.6 A W^-1, impressive detectivity of 6.2 × 10¹⁰Jones. All the results provide the insight into the benefits of interfacial carriers transfer for designing hybrid perovskite-2D materials based optoelectronic devices.

Keywords: CsPbBr3; MoTe2; charge transfer; heterojunction; photodetector.