Effects of Random Nanosized TiN Grain on Characteristic of Gate-All-Around FinFETs with Ferroelectric HZO Layer

Yiming Li; Min-Hui Chuang; Yu-Chin Tsai

doi:10.1186/s11671-022-03657-9

Effects of Random Nanosized TiN Grain on Characteristic of Gate-All-Around FinFETs with Ferroelectric HZO Layer

Nanoscale Res Lett. 2022 Jan 21;17(1):16. doi: 10.1186/s11671-022-03657-9.

Authors

Yiming Li^{1

2

3

4

5}, Min-Hui Chuang^{6

7}, Yu-Chin Tsai^{6

8}

Affiliations

¹ Parallel and Scientific Computing Laboratory, National Yang Ming Chiao Tung University, Hsinchu, 300, Taiwan. ymli@faculty.nctu.edu.tw.
² Institute of Communications Engineering, National Yang Ming Chiao Tung University, Hsinchu, 300, Taiwan. ymli@faculty.nctu.edu.tw.
³ Institute of Biomedical Engineering, National Yang Ming Chiao Tung University, Hsinchu, 300, Taiwan. ymli@faculty.nctu.edu.tw.
⁴ Department of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, 300, Taiwan. ymli@faculty.nctu.edu.tw.
⁵ Center for mmWave Smart Radar System and Technologies, National Yang Ming Chiao Tung University, Hsinchu, 300, Taiwan. ymli@faculty.nctu.edu.tw.
⁶ Parallel and Scientific Computing Laboratory, National Yang Ming Chiao Tung University, Hsinchu, 300, Taiwan.
⁷ Institute of Communications Engineering, National Yang Ming Chiao Tung University, Hsinchu, 300, Taiwan.
⁸ Institute of Biomedical Engineering, National Yang Ming Chiao Tung University, Hsinchu, 300, Taiwan.

Abstract

In this paper, we computationally study electrical characteristics for gate-all-around fin field effect transistors (GAA FinFETs) and negative capacitance GAA FinFETs (NC-GAA FinFETs) for sub-3-nm technological nodes. For the devices with the fin height of 55 nm, the on-state current increases (about 33% improvement) and the off-state current decreases (about 73% suppression) due to the NC effect. NC-GAA FinFETs have larger standard deviation of threshold voltage induced by the workfunction fluctuation (WKF) for both N-/P-type devices than those of GAA FinFETs. It is attributed to the variation of polarization in the different position of the ferroelectric layer. Notably, the inverter of NC-GAA FinFETs has larger noise margin and shorter delay time, compared with the inverter of GAA FinFETs; however, the characteristics of inverter of NC-GAA FinFETs suffer larger variability induced by the WKF.

Keywords: Ferroelectric; FinFET; Gate-all-around; Nano-sized metal grain; Negative capacitance; Short channel effect; Work-function fluctuation.

Grants and funding

MOST 110-2221-E-A49-139/Ministry of Science and Technology, Taiwan