Mechanical deformation of a crystal can have a profound effect on its physical properties. Notably, even small modifications of bond geometry can completely change the size and sign of magnetic exchange interactions and thus the magnetic ground state. Here we report the strain tuning of the magnetic properties of the A-type layered antiferromagnetic semiconductor CrSBr achieved by designing a strain device that can apply continuous, in situ uniaxial tensile strain to two-dimensional materials, reaching several percent at cryogenic temperatures. Using this apparatus, we realize a reversible strain-induced antiferromagnetic-to-ferromagnetic phase transition at zero magnetic field and strain control of the out-of-plane spin-canting process. First-principles calculations reveal that the tuning of the in-plane lattice constant strongly modifies the interlayer magnetic exchange interaction, which changes sign at the critical strain. Our work creates new opportunities for harnessing the strain control of magnetism and other electronic states in low-dimensional materials and heterostructures.
© 2022. The Author(s), under exclusive licence to Springer Nature Limited.