Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature

Honglong Ning; Xuan Zeng; Hongke Zhang; Xu Zhang; Rihui Yao; Xianzhe Liu; Dongxiang Luo; Zhuohui Xu; Qiannan Ye; Junbiao Peng

doi:10.3390/membranes12010029

Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature

Membranes (Basel). 2021 Dec 27;12(1):29. doi: 10.3390/membranes12010029.

Authors

Honglong Ning¹, Xuan Zeng¹, Hongke Zhang¹, Xu Zhang¹, Rihui Yao¹, Xianzhe Liu², Dongxiang Luo^{3

4}, Zhuohui Xu⁵, Qiannan Ye¹, Junbiao Peng¹

Affiliations

¹ State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China.
² Research Center of Flexible Sensing Materials and Devices, School of Applied Physics and Materials, Wuyi University, Jiangmen 529020, China.
³ Laboratory for Clean Energy and Materials, Guangzhou Key Huangpu Hydrogen Innovation Center, Institute of Clean Energy and Materials, School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou 510006, China.
⁴ School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China.
⁵ Guangxi Key Lab of Agricultural Resources Chemistry and Biotechnology, Yulin Normal University, Yulin 537000, China.

Abstract

Flexible and fully transparent thin film transistors (TFT) were fabricated via room temperature processes. The fabricated TFT on the PEN exhibited excellent performance, including a saturation mobility (μ_sat) of 7.9 cm²/V·s, an I_on/I_off ratio of 4.58 × 10⁶, a subthreshold swing (SS) of 0.248 V/dec, a transparency of 87.8% at 550 nm, as well as relatively good stability under negative bias stress (NBS) and bending stress, which shows great potential in smart, portable flexible display, and wearable device applications.

Keywords: flexible; fully transparent; oxide; thin film transistors.