Single-step, single-precursor synthesis of nitrogen-doped graphene oxide (N-GO) was demonstrated in this work. By choosing aniline as the sole source of carbon and nitrogen, N-GO films were fabricated using microwave plasma at a power as low as 80 W in atmospheric conditions. The aniline vapor dissociated under plasma formed islands of N-GO nanosheets on the substrates or walls of the quartz deposition chamber. The interplanar spacing in the pristine N-GO films was observed to be lower than that of GO films, which indicated a lower concentration of oxygen and other species present in the space between the N-GO layers. The as-fabricated N-GO demonstrated superior antiscaling and algicidal properties that are deemed imperative for water purification applications.
Keywords: aniline; atmospheric pressure microwave plasma; nitrogen-doped graphene oxide; single-precursor; water purification.