Novel Two-Dimensional ABX3 Dirac Materials: Achieving a High-Speed Strain Sensor via a Self-Doping Effect

Xingang Jiang; Tao Yang; Ge Fei; Wencai Yi; Xiaobing Liu

doi:10.1021/acs.jpclett.1c03829

Novel Two-Dimensional ABX₃ Dirac Materials: Achieving a High-Speed Strain Sensor via a Self-Doping Effect

J Phys Chem Lett. 2022 Jan 20;13(2):676-685. doi: 10.1021/acs.jpclett.1c03829. Epub 2022 Jan 13.

Authors

Xingang Jiang¹, Tao Yang^{1

2}, Ge Fei¹, Wencai Yi^{1

3}, Xiaobing Liu^{1

3}

Affiliations

¹ Laboratory of High Pressure Physics and Material Science (HPPMS), School of Physics and Physical Engineering, Qufu Normal University, Qufu, Shandong 273165, China.
² Institute of Advanced Materials, School of Electromechanical and Automobile Engineering, Huanggang Normal University, Huanggang, Hubei 438000, China.
³ Advanced Research Institute of Multidisciplinary Science, Qufu Normal University, Qufu, Shandong 273165, China.

PMID: 35023752
DOI: 10.1021/acs.jpclett.1c03829

Abstract

The pristine semimetal property of two-dimensional (2D) Dirac materials has limited their practical applications in today's electronic devices. Here we report a new type of 2D Dirac material, termed ABX₃ (A = F, Cl, Br, or I; B = P or As; X = C or Si) monolayers. We demonstrate that 14 ABX₃ monolayers possess good stability and high Fermi velocities. The FPC₃, ClPC₃, BrPC₃, and FAsC₃ monolayers exhibit a pristine n-type self-doping Dirac cone due to the interactions of electrons between the A-B units and C₆ rings, which is beneficial for realizing high-speed carriers. Interestingly, the ClPSi₃ monolayer exhibits remarkable responses to strain because a self-doping Dirac cone can be induced by relatively small in-plane biaxial strains (-5%), and the current-voltage (I-V) curves verified that the response strength is 11.57 times that of the graphene-based strain sensor at a bias of 1.10 V, indicating that the ClPSi₃ monolayer could be used as a potential excellent strain sensor.