Large-Composition-Range Pure-Phase Homogeneous InAs1- xSbx Nanowires

Lianjun Wen; Dong Pan; Lei Liu; Shucheng Tong; Ran Zhuo; Jianhua Zhao

doi:10.1021/acs.jpclett.1c04001

Large-Composition-Range Pure-Phase Homogeneous InAs_{1- x}Sb_x Nanowires

J Phys Chem Lett. 2022 Jan 20;13(2):598-605. doi: 10.1021/acs.jpclett.1c04001. Epub 2022 Jan 12.

Authors

Lianjun Wen^{1

2}, Dong Pan^{1

2}, Lei Liu^{1

2}, Shucheng Tong¹, Ran Zhuo^{1

2}, Jianhua Zhao^{1

2

3}

Affiliations

¹ State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.
² College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China.
³ CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, China.

PMID: 35019661
DOI: 10.1021/acs.jpclett.1c04001

Abstract

Narrow bandgap InAs_1-xSb_x nanowires show broad prospects for applications in wide spectrum infrared detectors, high-performance transistors, and quantum computation. Realizing such applications requires a fine control of the composition and crystal structure of nanowires. However, the fabrication of large-composition-range pure-phase homogeneous InAs_1-xSb_x nanowires remains a huge challenge. Here, we first report the growth of large-composition-range stemless InAs_1-xSb_x nanowires (0 ≤ x ≤ 0.63) on Si (111) substrates by molecular beam epitaxy. We find that pure-phase InAs_1-xSb_x nanowires can be successfully obtained by controlling the antimony content x, nanowire diameter, and nanowire growth direction. Detailed energy dispersive spectrum data show that the antimony is uniformly distributed along the axial and radial directions of InAs_1-xSb_x nanowires and no spontaneous core-shell nanostructures form in the nanowires. On the basis of field-effect measurements, we confirm that InAs_1-xSb_x nanowires exhibit good conductivity and their mobilities can reach 4200 cm² V^-1 s^-1 at 7 K. Our work lays the foundation for the development of InAs_1-xSb_x nanowire optoelectronic, electronic, and quantum devices.