High Photoresponse Black Phosphorus TFTs Capping with Transparent Hexagonal Boron Nitride

Dewu Yue; Ximing Rong; Shun Han; Peijiang Cao; Yuxiang Zeng; Wangying Xu; Ming Fang; Wenjun Liu; Deliang Zhu; Youming Lu

doi:10.3390/membranes11120952

High Photoresponse Black Phosphorus TFTs Capping with Transparent Hexagonal Boron Nitride

Membranes (Basel). 2021 Dec 1;11(12):952. doi: 10.3390/membranes11120952.

Authors

Dewu Yue^{1

2}, Ximing Rong¹, Shun Han¹, Peijiang Cao¹, Yuxiang Zeng¹, Wangying Xu¹, Ming Fang¹, Wenjun Liu¹, Deliang Zhu¹, Youming Lu^{1

2}

Affiliations

¹ College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China.
² Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.

Abstract

Black phosphorus (BP), a single elemental two-dimensional (2D) material with a sizable band gap, meets several critical material requirements in the development of future nanoelectronic applications. This work reports the ambipolar characteristics of few-layer BP, induced using 2D transparent hexagonal boron nitride (h-BN) capping. The 2D h-BN capping have several advantages over conventional Al₂O₃ capping in flexible and transparent 2D device applications. The h-BN capping technique was used to achieve an electron mobility in the BP devices of 73 cm²V^-1s^-1, thereby demonstrating n-type behavior. The ambipolar BP devices exhibited ultrafast photodetector behavior with a very high photoresponsivity of 1980 mA/W over the ultraviolet (UV), visible, and infrared (IR) spectral ranges. The h-BN capping process offers a feasible approach to fabricating n-type behavior BP semiconductors and high photoresponse BP photodetectors.

Keywords: black phosphorus (BP); hexagonal boron nitride (h-BN); n-type; photodetector; thin film transistors (TFTs).